Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 160V
Max Breakdown Voltage 150V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 150V
Polarity/Channel Type PNP
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 625mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ