2N5401CTA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 60 @ 10mA 5V 600mA 625mW 400MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 60
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -160V
Frequency - Transition 400MHz
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 150V
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type PNP
Gain Bandwidth Product 300MHz
Power - Max 625mW
Power Dissipation 625mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number 2N5401
Frequency 400MHz
Current Rating -600mA
Max Power Dissipation 625mW
Voltage - Rated DC -160V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Weight 178.2mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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