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2N5401_D28Z

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole PNP Single Bipolar (BJT) Transistor 60 @ 10mA 5V 50nA ICBO 625mW 400MHz
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Inventory: 5517
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -160V
Max Power Dissipation 625mW
Current Rating -600mA
Frequency 400MHz
Base Part Number 2N5401
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -5V
hFE Min 60

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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