2N5366
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 50mA 1V 100nA 625mW 250MHz
PDF
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Buying Options
Total Price: USD $0.04
Unit Price: USD $0.044
≥1 USD $0.044
Inventory: 1171
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Collector-Base Capacitance-Max 8pF
hFE Min 100
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 40V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1V @ 30mA, 300mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 1V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 40V
Transistor Type PNP
Polarity/Channel Type PNP
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number 2N5366
Current Rating -500mA
Reach Compliance Code unknown
Terminal Form WIRE
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -40V
Subcategory Other Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2002
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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