2N5308_D75Z
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN - Darlington 2N5308 Bipolar (BJT) Transistor 7000 @ 2mA 5V 1.2A 625mW 40V
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Inventory: 3700
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Technical Details
Technical
Current - Collector (Ic) (Max) 1.2A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 200μA, 200mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 7000 @ 2mA 5V
Transistor Type NPN - Darlington
Power - Max 625mW
Base Part Number 2N5308
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
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