2N5307
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 2000 @ 2mA 5V 1.2A 625mW 40V
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC Unknown
Technical
hFE Min 2000
Emitter Base Voltage (VEBO) 12V
Collector Base Voltage (VCBO) 40V
Collector Emitter Saturation Voltage 1.4V
Current - Collector (Ic) (Max) 1.2A
Voltage - Collector Emitter Breakdown (Max) 40V
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 200μA, 200mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2mA 5V
Max Collector Current 1.2A
Collector Emitter Voltage (VCEO) 40V
Transistor Type NPN - Darlington
Power - Max 625mW
Power Dissipation 625mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number 2N5307
Current Rating 1.2A
Max Power Dissipation 625mW
Voltage - Rated DC 40V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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