2N5210NMBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN 2N5210 Bipolar (BJT) Transistor 200 @ 100muA 5V 100mA 625mW 30MHz
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Inventory: 6644
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5210
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 30MHz
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