2N5089RLRAG
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 25V 0.05A TO-92
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 400
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100μA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number 2N5089
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 50mA
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 25V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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