2N5089G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Bulk
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.049125
≥1 USD $0.049125
≥500 USD $0.036127
≥1000 USD $0.030105
≥2000 USD $0.027621
≥5000 USD $0.025818
≥10000 USD $0.024011
≥15000 USD $0.023221
≥50000 USD $0.022835
Inventory: 1176
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 6.35mm
Length 6.35mm
Height 6.35mm
Technical
hFE Min 400
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100μA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number 2N5089
Time@Peak Reflow Temperature-Max (s) 40
Frequency 50MHz
Current Rating 50mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 25V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Alternative Model
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