Emitter Base Voltage (VEBO) 4.5V
Collector Base Voltage (VCBO) 35V
Max Breakdown Voltage 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 30V
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Element Configuration Single
Max Power Dissipation 625mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ