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2N5088TAR

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 4.19mm
Length 5.2mm
Height 5.33mm

Technical

hFE Min 300
Emitter Base Voltage (VEBO) 4.5V
Collector Base Voltage (VCBO) 35V
Max Breakdown Voltage 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N5088
Frequency 50MHz
Current Rating 100mA
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 30V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks

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