2N5088TA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Transistor General Purpose
PDF
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.0532
≥1 USD $0.0532
≥10 USD $0.0437
≥100 USD $0.0418
≥500 USD $0.04085
≥1000 USD $0.0399
Inventory: 1193
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 100mA
Frequency 50MHz
Base Part Number 2N5088
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 4.5V
hFE Min 300
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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