2N5088G
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz
PDF
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥10 USD $0.114
≥100 USD $0.1102
≥500 USD $0.1064
≥1000 USD $0.10355
≥10000 USD $0.09215
Inventory: 1186
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5088
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 3V
hFE Min 300
Dimensions
Height 6.35mm
Length 19.05mm
Width 6.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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