Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 50V
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 50V
Polarity/Channel Type PNP
Gain Bandwidth Product 40MHz
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 625mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ