2N4403RLRAG
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Cut Tape (CT) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 2V -600mA 625mW 200MHz
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.05605
≥1 USD $0.05605
≥10 USD $0.04655
≥100 USD $0.04465
≥500 USD $0.0437
≥1000 USD $0.0418
≥10000 USD $0.038
Inventory: 1125
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating -600mA
Frequency 200MHz
Base Part Number 2N4403
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 750mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Turn Off Time-Max (toff) 255ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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