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2N4401_D11Z

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 1V 600mA 625mW 250MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 750mV
Collector Emitter Breakdown Voltage 40V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Max Collector Current 600mA
Collector Emitter Voltage (VCEO) 40V
Transistor Type NPN
Gain Bandwidth Product 250MHz
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Base Part Number 2N4401
Frequency 250MHz
Current Rating 600mA
Max Power Dissipation 625mW
Voltage - Rated DC 40V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

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