2N4123RLRM
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 50 @ 2mA 1V 50nA ICBO 625mW 250MHz
PDF
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.267537
≥1 USD $0.267537
≥10 USD $0.25239
≥100 USD $0.238106
≥500 USD $0.224626
≥1000 USD $0.211914
Inventory: 2773
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 50
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector Emitter Saturation Voltage 300mV
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA 1V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 250MHz
Transistor Application SWITCHING
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number 2N4123
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 200mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 30V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 1996
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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