2N3859A
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 1mA 1V 500nA ICBO 625mW 250MHz
PDF
/
Buying Options
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥100 USD $0.21375
≥500 USD $0.2071
≥1000 USD $0.20045
Inventory: 1147
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code unknown
Current Rating 500A
Frequency 250MHz
Base Part Number 2N3859
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 1V
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 60V
Transition Frequency 90MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Collector-Base Capacitance-Max 4pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Recommended For You
2N3859A+price,2N3859A+datasheet,2N3859A+in stock,buy+2N3859A,finder+2N3859A,2N3859A+tutorials,2N3859A+download