JAN2N5665
RoHS
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Package TO-213AA, TO-66-2
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-66
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Physical
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 2.5W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 2.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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