JAN2N2222AUA
RoHS
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Package 4-SMD
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 50V 0.8A 4-Pin UA
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Collector Base Voltage (VCBO) 75V
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type NPN
Power - Max 500mW
Max Power Dissipation 500mW
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series Military, MIL-PRF-19500/255
Published 2007
Packaging Bulk
Operating Temperature -65°C~200°C TJ
Physical
Number of Pins 4
Package / Case 4-SMD
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 23 Weeks
Alternative Model
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