BF421-AP
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-226-3TO-92-3 (TO-226AA) Formed Leads Through Hole PNP SINGLE Bipolar (BJT) Transistor 50 @ 25mA 20V 100mA 830MW 60MHz
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Frequency - Transition 60MHz
Transition Frequency 60MHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 300V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Transistor Type PNP
Polarity/Channel Type PNP
Power - Max 830MW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-W3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Pbfree Code yes
JESD-609 Code e3
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type Through Hole
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