BC558B-AP
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP SINGLE Bipolar (BJT) Transistor 120 @ 2mA 5V 100mA 625mW 150MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 360MHz
Frequency - Transition 150MHz
Compliance
RoHS Status RoHS Compliant
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