BC556C-AP
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP SINGLE Bipolar (BJT) Transistor 120 @ 2mA 5V 100mA 625mW 150MHz
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Frequency - Transition 150MHz
Transition Frequency 150MHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 625mW
Configuration SINGLE
Number of Elements 1
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
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