2SD667-D-AP
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANSISTOR TO-92
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Frequency - Transition 140MHz
Transition Frequency 140MHz
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 150mA 5V
Transistor Type NPN
Polarity/Channel Type NPN
Power - Max 900MW
Configuration SINGLE
Number of Elements 1
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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