BCX5516E6433HTMA1
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 60V 1A T/R
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.06175
≥1 USD $0.06175
≥10 USD $0.0513
≥100 USD $0.0494
≥500 USD $0.0475
≥1000 USD $0.04655
Inventory: 4007
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Transition Frequency 100MHz
Current - Collector (Ic) (Max) 1A
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 2W
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSSO-F3
Base Part Number BCX55
Frequency 100MHz
Terminal Form FLAT
Terminal Position SINGLE
Max Power Dissipation 2W
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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