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BCW66KHB6327HTLA1

Infineon Technologies
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 45V 0.8A 3-Pin SOT-23 T/R
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Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 170MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCW66
Number of Elements 1
Configuration SINGLE
Power Dissipation 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 800mA
Transition Frequency 170MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 5V

Compliance

RoHS Status RoHS Compliant

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