DSM80100M-7
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
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Buying Options
Total Price: USD $2.03
Unit Price: USD $2.0254
≥1 USD $2.0254
≥10 USD $1.66155
≥100 USD $1.61025
≥500 USD $1.558
≥1000 USD $1.50575
Inventory: 1061
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 600mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Polarity PNP
Element Configuration Dual
Power - Max 600mW
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -4V
Continuous Collector Current -500mA
Dimensions
Height 1.1mm
Length 3mm
Width 1.6mm
Compliance
RoHS Status ROHS3 Compliant
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