TIP142
RoHS
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Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 100V
PDF
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Buying Options
Total Price: USD $3.11
Unit Price: USD $3.1064
≥1 USD $3.1064
≥10 USD $2.948
≥100 USD $2.7984
≥500 USD $2.64
≥1000 USD $2.5784
Inventory: 624
Minimum: 1
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Technical Details
Technical
Continuous Collector Current 10A
hFE Min 1000
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
JEDEC-95 Code TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 125W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 125W
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2012
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-218-3
Mounting Type Through Hole
Mount Through Hole
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