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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP 3 Bipolar (BJT) Transistor 1000 @ 3A 4V 50muA 80W 4MHz
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Buying Options
Total Price: USD $0.99
Unit Price: USD $0.9856
≥1 USD $0.9856
≥10 USD $0.9328
≥100 USD $0.8888
≥500 USD $0.836
≥1000 USD $0.8184
Inventory: 79
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 80W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 4MHz
Frequency - Transition 4MHz

Compliance

RoHS Status RoHS Compliant

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