MPSA65
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Box Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 100mA 625mW 100MHz
PDF
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.10735
≥1 USD $0.10735
≥10 USD $0.08835
≥100 USD $0.0855
≥500 USD $0.08265
≥1000 USD $0.08075
Inventory: 126
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Continuous Collector Current 100mA
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 30V
Frequency - Transition 100MHz
Transition Frequency 100MHz
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type PNP - Darlington
Power Dissipation 625mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2012
Packaging Box
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Factory Lead Time 8 Weeks
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