BUV47A
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
POWER TRANSISTOR NPN TO218
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DC Current Gain-Min (hFE) 7
Collector Emitter Breakdown Voltage 450V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 5A
Max Collector Current 9A
Collector Emitter Voltage (VCEO) 1.5V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power - Max 100W
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 100W
Subcategory Other Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Physical
Transistor Element Material SILICON
Package / Case TO-218-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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