BDV65B
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
POWER TRANSISTOR NPN TO218
PDF
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Buying Options
Total Price: USD $23.24
Unit Price: USD $23.2446
≥1 USD $23.2446
≥10 USD $19.07315
≥100 USD $18.47655
≥500 USD $17.8809
≥1000 USD $17.28525
Inventory: 4807
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 60MHz
Transition Frequency 60MHz
Current - Collector (Ic) (Max) 12A
Collector Emitter Breakdown Voltage 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Max Collector Current 12A
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Configuration DARLINGTON
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 125W
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Physical
Transistor Element Material SILICON
Package / Case TO-218-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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