BDV65A
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
POWER TRANSISTOR NPN TO218
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Transistor Element Material SILICON
Technical
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Max Power Dissipation 125W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration DARLINGTON
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 12A
Transition Frequency 60MHz
Frequency - Transition 60MHz
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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