BDV64B
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP DARLINGTON Bipolar (BJT) Transistor 1000 @ 5A 4V 12A 125W 60MHz
PDF
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Inventory: 2769
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 125W
Frequency - Transition 60MHz
Transition Frequency 60MHz
Current - Collector (Ic) (Max) 12A
Voltage - Collector Emitter Breakdown (Max) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 125W
Case Connection COLLECTOR
Configuration DARLINGTON
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-218-3
Mounting Type Through Hole
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