2N4250
RoHS
/
Package TO-106-3 Domed
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANSISTOR PNP TO-106
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 0.2W
Frequency - Transition 50MHz
Transition Frequency 50MHz
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA 5V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 200mW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-106-3 Domed
Mounting Type Through Hole
Alternative Model
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