2N6052
RoHS
/
Package TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-3 Through Hole Single 2 Bipolar (BJT) Transistor 12A 150W 4MHz 100V
PDF
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Buying Options
Total Price: USD $2.2
Unit Price: USD $2.2
≥1 USD $2.2
Inventory: 60
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Width 26.67mm
Length 39.36mm
Height 11.43mm
Technical
Continuous Collector Current 12A
DC Current Gain-Min (hFE) 750
hFE Min 750
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Frequency - Transition 4MHz
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 100V
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 3V
Case Connection COLLECTOR
Element Configuration Single
Power Dissipation-Max 150W
Polarity PNP
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.95
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2016
Physical
Weight 6.40101g
Package / Case TO-3
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
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