2N5885
RoHS
/
Package TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-3 Through Hole Single 2 Bipolar (BJT) Transistor 25A 200W 4MHz 60V
PDF
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Buying Options
Total Price: USD $0.93
Unit Price: USD $0.9291
≥1 USD $0.9291
≥10 USD $0.76285
≥100 USD $0.7391
≥500 USD $0.71535
≥1000 USD $0.6916
Inventory: 16003
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 20
hFE Min 20
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Frequency - Transition 4MHz
Collector Emitter Saturation Voltage 4V
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 60V
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 4V
Gain Bandwidth Product 4MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Element Configuration Single
Power Dissipation-Max 200W
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.95
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Package / Case TO-3
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
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