2N5301
RoHS
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Package TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-3 Through Hole SINGLE 2 Bipolar (BJT) Transistor 30A 200W 4MHz 40V
PDF
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Buying Options
Total Price: USD $3.73
Unit Price: USD $3.7312
≥1 USD $3.7312
≥10 USD $3.5464
≥100 USD $3.3616
≥500 USD $3.168
≥1000 USD $3.0976
Inventory: 75
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 15
hFE Min 15
Collector Base Voltage (VCBO) 40V
Frequency - Transition 4MHz
Collector Emitter Saturation Voltage 4V
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 40V
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 40V
Gain Bandwidth Product 4MHz
Case Connection COLLECTOR
Power Dissipation-Max 200W
Configuration SINGLE
Polarity NPN
Number of Elements 1
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Transistor Element Material SILICON
Package / Case TO-3
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
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