2N4895
RoHS
/
Package TO-39
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
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Inventory: 6885
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 40
hFE Min 40
Emitter Base Voltage (VEBO) 6V
Power Dissipation-Max (Abs) 0.8W
Collector Base Voltage (VCBO) 120V
Frequency - Transition 50MHz
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 60V
Max Collector Current 1μA
Collector Emitter Voltage (VCEO) 60V
Gain Bandwidth Product 50MHz
Transistor Application SWITCHING
Element Configuration Single
Polarity NPN
Number of Elements 1
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Packaging Bulk
Physical
Transistor Element Material SILICON
Package / Case TO-39
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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