2N4014
RoHS
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Package TO-18
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN High Current
PDF
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Buying Options
Total Price: USD $3.05
Unit Price: USD $3.049941
≥1 USD $3.049941
≥10 USD $2.877305
≥100 USD $2.714443
≥500 USD $2.560792
≥1000 USD $2.415842
Inventory: 4179
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Turn On Time-Max (ton) 35ns
DC Current Gain-Min (hFE) 60
hFE Min 60
Emitter Base Voltage (VEBO) 6V
Power Dissipation-Max (Abs) 0.36W
Collector Base Voltage (VCBO) 80V
Frequency - Transition 300MHz
Collector Emitter Saturation Voltage 520mV
Transition Frequency 300MHz
Collector Emitter Breakdown Voltage 50V
Max Collector Current 1.7μA
Collector Emitter Voltage (VCEO) 50V
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
Element Configuration Single
Polarity NPN
Number of Elements 1
Operating Temperature (Max) 200°C
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2004
Packaging Bulk
Physical
Transistor Element Material SILICON
Package / Case TO-18
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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