2N3716
RoHS
/
Package TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-3 Through Hole SINGLE 2 Bipolar (BJT) Transistor 10A 150W 4MHz 100V
PDF
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 44
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
DC Current Gain-Min (hFE) 30
hFE Min 50
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Frequency - Transition 4MHz
Collector Emitter Saturation Voltage 800mV
Transition Frequency 4MHz
Collector Emitter Breakdown Voltage 80V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 80V
Gain Bandwidth Product 4MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation 150W
Power Dissipation-Max 150W
Configuration SINGLE
Polarity NPN
Number of Elements 1
JESD-30 Code O-MBFM-P2
Pin Count 2
Frequency 4MHz
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2001
Physical
Package / Case TO-3
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
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