2N3584
RoHS
/
Package TO-66
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-66 Through Hole SINGLE 2 Bipolar (BJT) Transistor 2A 35W 10MHz 375V
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 25
hFE Min 40
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 375V
Frequency - Transition 10MHz
Collector Emitter Saturation Voltage 750mV
Transition Frequency 10MHz
Collector Emitter Breakdown Voltage 250V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 750mV
Gain Bandwidth Product 10MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation-Max 35W
Configuration SINGLE
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.95
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 2
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Package / Case TO-66
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
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