2N2925
RoHS
/
Package TO-92
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Gen Pur SS
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 235
hFE Min 235
Emitter Base Voltage (VEBO) 5V
Power Dissipation-Max (Abs) 0.8W
Collector Base Voltage (VCBO) 25V
Frequency - Transition 160MHz
Transition Frequency 160MHz
Collector Emitter Breakdown Voltage 25V
Max Collector Current 100nA
Collector Emitter Voltage (VCEO) 25V
Gain Bandwidth Product 160MHz
Element Configuration Single
Polarity NPN
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Subcategory Other Transistors
Additional Feature LOW NOISE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2004
Packaging Bulk
Physical
Transistor Element Material SILICON
Package / Case TO-92
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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