2N2270
RoHS
/
Package TO-39
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Hi-Spd SW
PDF
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Buying Options
Total Price: USD $3.22
Unit Price: USD $3.2224
≥1 USD $3.2224
≥10 USD $2.64385
≥100 USD $2.5612
≥500 USD $2.47855
≥1000 USD $2.3959
Inventory: 506
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
DC Current Gain-Min (hFE) 50
hFE Min 50
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 60V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage 900mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 45V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 900mV
Gain Bandwidth Product 100MHz
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 1W
Polarity NPN
Number of Elements 1
Operating Temperature (Max) 200°C
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Transistor Element Material SILICON
Package / Case TO-39
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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