2N2222A
RoHS
/
Package TO-18
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole Single 3 Bipolar (BJT) Transistor 800mA 500mW 250MHz 285ns
PDF
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Buying Options
Total Price: USD $0.01
Unit Price: USD $0.014834
≥1 USD $0.014834
≥10 USD $0.011891
≥100 USD $0.009864
≥500 USD $0.008883
≥1000 USD $0.008032
Inventory: 1331
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Height 5.33mm
Technical
Turn Off Time-Max (toff) 285ns
Max Junction Temperature (Tj) 200°C
DC Current Gain-Min (hFE) 40
hFE Min 100
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Frequency - Transition 300MHz
Collector Emitter Saturation Voltage 1V
Transition Frequency 300MHz
Collector Emitter Breakdown Voltage 40V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 40V
Gain Bandwidth Product 300MHz
Transistor Application SWITCHING
Frequency (Max) 300MHz
Power Dissipation 500mW
Element Configuration Single
Power Dissipation-Max 500mW
Polarity NPN
Number of Elements 1
Pin Count 3
Frequency 250MHz
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2003
Packaging Bulk
Physical
Number of Pins 3
Package / Case TO-18
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
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