2N2218A
RoHS
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Package TO-39
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-39 Through Hole Single 3 Bipolar (BJT) Transistor 800mA 800mW 250MHz 285ns
PDF
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Buying Options
Total Price: USD $1.46
Unit Price: USD $1.4649
≥1 USD $1.4649
≥10 USD $1.20175
≥100 USD $1.1647
≥500 USD $1.1267
≥1000 USD $1.08965
Inventory: 2273
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Turn On Time-Max (ton) 35ns
Turn Off Time-Max (toff) 285ns
DC Current Gain-Min (hFE) 40
hFE Min 20
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Frequency - Transition 250MHz
Collector Emitter Saturation Voltage 1V
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 40V
Max Collector Current 800mA
Collector Emitter Voltage (VCEO) 1V
Gain Bandwidth Product 250MHz
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 800mW
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.75
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Package / Case TO-39
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
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