BDV64B-S
RoHS 
RoHS compliant
RoHS compliantPackage TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bourns BDV64B-S PNP Darlington Transistor, 12 A 100 V HFE:1000, 3-Pin SOT-93
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Technical Details
Physical
Supplier Device Package SOT-93
Number of Pins 3
Package / Case TO-218-3
Mounting Type Through Hole
Mount Through Hole
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BDV64
Number of Elements 1
Polarity PNP
Element Configuration Single
Power - Max 3.5W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Emitter Breakdown Voltage 100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Dimensions
Height 12.2mm
Length 15.2mm
Width 4.9mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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