BD649-S
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans Darlington NPN 100V 8A 3-Pin(3+Tab) TO-220
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.7mm
Length 10.4mm
Height 9.3mm
Technical
hFE Min 750
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 120V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 500μA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN - Darlington
Power - Max 2W
Case Connection COLLECTOR
Power Dissipation 62.5W
Element Configuration Single
Polarity NPN
Number of Elements 1
Pin Count 3
Base Part Number BD649
Max Power Dissipation 2W
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 1993
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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