MPSH11
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF SMALL SIGNAL TRANSISTOR
PDF
/
Buying Options
Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 9266
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Collector-Base Capacitance-Max 0.7pF
Highest Frequency Band VERY HIGH FREQUENCY B
Frequency - Transition 650MHz
Transition Frequency 650MHz
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 350mW
Configuration SINGLE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Additional Feature LOW NOISE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Alternative Model
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