MPSH10
RoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Through Hole NPN SINGLE LOW NOISE RF Transistor 60 @ 4mA 10V 0.05A 350mW 650MHz
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Buying Options
Total Price: USD $0.02
Unit Price: USD $0.01805
≥1 USD $0.01805
≥10 USD $0.0152
≥100 USD $0.01425
≥500 USD $0.01425
≥1000 USD $0.0133
≥10000 USD $0.01235
Inventory: 125235
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Collector-Base Capacitance-Max 0.7pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector Current-Max (IC) 0.05A
Frequency - Transition 650MHz
Transition Frequency 650MHz
Voltage - Collector Emitter Breakdown (Max) 25V
JEDEC-95 Code TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 350mW
Configuration SINGLE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Additional Feature LOW NOISE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Mounting Type Through Hole
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