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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bulk Through Hole NPN SINGLE RF Transistor 25 @ 3mA 1V 50mA 200mW 2GHz
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON

Technical

Packaging Bulk
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Additional Feature LOW NOISE
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 900MHz
Frequency - Transition 2GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1pF

Compliance

RoHS Status ROHS3 Compliant

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